Zhen Zhu OPTICAL AND STRUCTURAL CHARACTERIZATION OF InGaN/GaN MULTIPLE QUANTUM WELL STRUCTURES IRRADIATED BY HIGH ENERGY HEAVY IONS
نویسندگان
چکیده
منابع مشابه
Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition
InGaN/GaN multiple quantum well light emitting diode structures have been grown on sapphire substrates by metalorganic chemical vapor deposition. They are investigated, in this study, by high-resolution X-ray diffraction, high-resolution transmission electron microscopy, photoluminescence, and photoluminescence excitation. HR-XRD showed multiple satellite peaks up to 10th order due to the quant...
متن کاملOptical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
InGaN/GaN multiple quantum well (MQW) light emitting diode (LED) structures with blue and green light emissions have been grown on sapphire substrates by metalorganic chemical vapor deposition. They are investigated by high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), photoluminescence (PL) and photoluminescence excitation (PLE). HR-XRD showe...
متن کاملEmission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods...
متن کاملINFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS
We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...
متن کاملInvestigation of large Stark shifts in InGaN/GaN multiple quantum wells
Related Articles Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on rsapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells J. Appl. Phys. 112, 033513 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitti...
متن کامل